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Adsorption of argon from sub- to supercritical conditions on graphitized thermal carbon black and in graphitic slit pores: A grand canonical Monte Carlo simulation study

机译:亚临界至超临界条件下石墨化热炭黑和石墨狭缝孔中氩的吸附:大型经典蒙特卡洛模拟研究

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摘要

In this paper we consider the adsorption of argon on the surface of graphitized thermal carbon black and in slit pores at temperatures ranging from subcritical to supercritical conditions by the method of grand canonical Monte Carlo simulation. Attention is paid to the variation of the adsorbed density when the temperature crosses the critical point. The behavior of the adsorbed density versus pressure (bulk density) shows interesting behavior at temperatures in the vicinity of and those above the critical point and also at extremely high pressures. Isotherms at temperatures greater than the critical temperature exhibit a clear maximum, and near the critical temperature this maximum is a very sharp spike. Under the supercritical conditions and very high pressure the excess of adsorbed density decreases towards zero value for a graphite surface, while for slit pores negative excess density is possible at extremely high pressures. For imperfect pores (defined as pores that cannot accommodate an integral number of parallel layers under moderate conditions) the pressure at which the excess pore density becomes negative is less than that for perfect pores, and this is due to the packing effect in those imperfect pores. However, at extremely high pressure molecules can be packed in parallel layers once chemical potential is great enough to overcome the repulsions among adsorbed molecules. (c) 2005 American Institute of Physics.
机译:在本文中,我们通过大规范蒙特卡罗模拟方法考虑了在亚临界到超临界条件下,石墨在热化炭黑表面上和狭缝中的氩气吸附。当温度超过临界点时,要注意吸附密度的变化。吸附密度对压力的行为(体密度)在临界点附近和高于临界点的温度下以及在极高的压力下表现出有趣的行为。在高于临界温度的温度下,等温线显示出明显的最大值,而在临界温度附近,该最大值是非常尖锐的峰值。在超临界条件下和非常高的压力下,石墨表面的吸附密度过剩会降低至零值,而对于狭缝孔,在极高的压力下可能会出现负的过剩密度。对于不完善的孔(定义为在中等条件下不能容纳整数个平行层的孔),多余孔密度变为负值的压力小于完美孔的压力,这是由于这些不完善孔中的堆积效应。然而,在极高的压力下,一旦化学势足以克服吸附分子之间的排斥作用,分子就可以堆积在平行层中。 (c)2005年美国物理研究所。

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    Do, D. D.; Do, H. D.;

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  • 年度 2005
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